Stéphane Lefebvre

Publication Activity (10 Years)

Years Active: 2004-2019
Publications (10 Years): 8

Top Topics

Electrical Properties

Experimental Study

Top Venues

Microelectron. Reliab.

Math. Comput. Simul.

Publications

F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Marc Cousineau
SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation. Math. Comput. Simul. 158 (2019)
Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectron. Reliab. (2018)
Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi
Effect of short circuit aging on safe operating area of SiC MOSFET. Microelectron. Reliab. (2018)
Yoann Pascal, Denis Labrousse, Mickael Petit, Stéphane Lefebvre, François Costa
Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam. Microelectron. Reliab. (2018)
F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane
Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. Microelectron. Reliab. (2018)
R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros
Mechanisms of power module source metal degradation during electro-thermal aging. Microelectron. Reliab. (2017)
F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectron. Reliab. (2017)
M. Landel, C. Gautier, Denis Labrousse, Stéphane Lefebvre
[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. Microelectron. Reliab. 64 (2016)
Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. Microelectron. Reliab. 55 (9-10) (2015)
R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros
In-depth investigation of metallization aging in power MOSFETs. Microelectron. Reliab. 55 (9-10) (2015)
Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, P. Mary, Stéphane Lefebvre
Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. Microelectron. Reliab. 55 (9-10) (2015)
Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy
3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. Microelectron. Reliab. 54 (9-10) (2014)
Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. Microelectron. Reliab. 53 (9-11) (2013)
D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene
Robustness of 1.2 kV SiC MOSFET devices. Microelectron. Reliab. 53 (9-11) (2013)
D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene
Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. Microelectron. Reliab. 52 (9-10) (2012)
Yi Tian, Dejan Vasic, Stéphane Lefebvre
Application of thermoelectricity to IGBT for temperature regulation and energy harvesting. ISIE (2012)
Tien Anh Nguyen, Pierre-Yves Joubert, Stéphane Lefebvre, G. Chaplier, Lionel Rousseau
Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. Microelectron. Reliab. 51 (6) (2011)
Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition. Microelectron. Reliab. 51 (2) (2011)
Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. IEEE Trans. Ind. Electron. 58 (10) (2011)
S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps
A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices. Microelectron. Reliab. 51 (9-11) (2011)
M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah
Ageing of SiC JFET transistors under repetitive current limitation conditions. Microelectron. Reliab. 50 (9-11) (2010)
Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche
Estimation of SiC JFET temperature during short-circuit operations. Microelectron. Reliab. 49 (9-11) (2009)
S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps
Characterisation of power modules ceramic substrates for reliability aspects. Microelectron. Reliab. 49 (9-11) (2009)
Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. Microelectron. Reliab. 47 (2-3) (2007)
L. Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières
Failure modes on low voltage power MOSFETs under high temperature application. Microelectron. Reliab. 47 (9-11) (2007)
M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, L. Dupont, Stéphane Lefebvre
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectron. Reliab. 47 (9-11) (2007)
L. Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. Microelectron. Reliab. 46 (9-11) (2006)
Zoubir Khatir, Stéphane Lefebvre
Boundary element analysis of thermal fatigue effects on high power IGBT modules. Microelectron. Reliab. 44 (6) (2004)