Zoubir Khatir

Publication Activity (10 Years)

Years Active: 2003-2018
Publications (10 Years): 5

Top Topics

High Temperature

Environmental Conditions

Delaunay Triangulation

Top Venues

Microelectron. Reliab.

Publications

Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten
/AlGaN/GaN normally-ON devices. Microelectron. Reliab. (2018)
Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. Microelectron. Reliab. (2018)
Ali Ibrahim, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. Microelectron. Reliab. 58 (2016)
Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal, Mohamad Oueidat
Control strategy for extreme conditions regenerative braking of a hybrid energy storage system for an electric vehicle. INDIN (2016)
Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal
Energy management of a battery-flywheel storage system used for regenerative braking recuperation of an Electric Vehicle. IECON (2016)
Abdelfatah Kolli, Alexandre De Bernardinis, Zoubir Khatir, Arnaud Gaillard, Olivier Bethoux, Daniel Hissel
Part-load control stategy of a 20kW SiC power converter for embedded PEMFC multi-stack architectures. IECON (2015)
Thierry Kociniewski, Zoubir Khatir
Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices. IRPS (2015)
Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir
Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions. Microelectron. Reliab. 55 (3-4) (2015)
Son-Ha Tran, L. Dupont, Zoubir Khatir
Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions. Microelectron. Reliab. 54 (9-10) (2014)
Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir
μ-Raman spectroscopy for stress analysis in high power silicon devices. Microelectron. Reliab. 54 (9-10) (2014)
Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. Microelectron. Reliab. 53 (9-11) (2013)
D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene
Robustness of 1.2 kV SiC MOSFET devices. Microelectron. Reliab. 53 (9-11) (2013)
Jeff Moussodji, Thierry Kociniewski, Zoubir Khatir
Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions. Microelectron. Reliab. 53 (9-11) (2013)
D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene
Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. Microelectron. Reliab. 52 (9-10) (2012)
Jean-Pierre Ousten, Zoubir Khatir
Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications. Microelectron. Reliab. 51 (9-11) (2011)
Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. IEEE Trans. Ind. Electron. 58 (10) (2011)
M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah
Ageing of SiC JFET transistors under repetitive current limitation conditions. Microelectron. Reliab. 50 (9-11) (2010)
Zoubir Khatir, L. Dupont, Ali Ibrahim
Investigations on junction temperature estimation based on junction voltage measurements. Microelectron. Reliab. 50 (9-11) (2010)
Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche
Estimation of SiC JFET temperature during short-circuit operations. Microelectron. Reliab. 49 (9-11) (2009)
S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps
Characterisation of power modules ceramic substrates for reliability aspects. Microelectron. Reliab. 49 (9-11) (2009)
Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. Microelectron. Reliab. 47 (2-3) (2007)
L. Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières
Failure modes on low voltage power MOSFETs under high temperature application. Microelectron. Reliab. 47 (9-11) (2007)
M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, L. Dupont, Stéphane Lefebvre
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectron. Reliab. 47 (9-11) (2007)
L. Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. Microelectron. Reliab. 46 (9-11) (2006)
Zoubir Khatir, Stéphane Lefebvre
Boundary element analysis of thermal fatigue effects on high power IGBT modules. Microelectron. Reliab. 44 (6) (2004)
S. Carubelli, Zoubir Khatir
Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions. Microelectron. J. 34 (12) (2003)