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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.

F. BoigeFrédéric RichardeauDavid TrémouillesStéphane LefebvreG. Guibaud
Published in: Microelectron. Reliab. (2017)
Keyphrases
  • short circuit
  • thin film
  • power consumption
  • induction motor
  • electron microscopy
  • room temperature
  • missing data
  • power management
  • low cost
  • high speed
  • input output
  • feed forward
  • multi layer