Asad Fayyaz

Publication Activity (10 Years)

Years Active: 2014-2019
Publications (10 Years): 6

Top Topics

Computational Power

Friendly Interface

High Temperature

Top Venues

Microelectron. Reliab.

Publications

Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS (2019)
Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace
Avalanche ruggedness of parallel SiC power MOSFETs. Microelectron. Reliab. (2018)
Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson
subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectron. Reliab. (2018)
Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. IRPS (2018)
Alberto Castellazzi, Asad Fayyaz, G. Romano, Li Yang, Michele Riccio, Andrea Irace
SiC power MOSFETs performance, robustness and technology maturity. Microelectron. Reliab. 58 (2016)
Asad Fayyaz, G. Romano, Alberto Castellazzi
Body diode reliability investigation of SiC power MOSFETs. Microelectron. Reliab. 64 (2016)
Asad Fayyaz, Alberto Castellazzi
High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectron. Reliab. 55 (9-10) (2015)
Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectron. Reliab. 54 (9-10) (2014)