Patrick Austin

Publication Activity (10 Years)

Years Active: 2008-2022
Publications (10 Years): 1

Top Topics

Design Principles

Automatic Analysis

Top Venues

Microelectron. Reliab.

Publications

Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. MIXDES (2022)
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55 (9-10) (2015)
Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli
An improved junction termination design using deep trenches for superjunction power devices. MIXDES (2015)
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54 (9-10) (2014)
Moustafa Zerarka, Patrick Austin, Marise Bafleur
Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTs. Microelectron. Reliab. 51 (9-11) (2011)
Jean-Luc Fock Sui Too, B. Chauchat, Patrick Austin, Patrick Tounsi, Michel Mermet-Guyennet, Régis Meuret
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications. Microelectron. Reliab. 48 (8-9) (2008)