Peter Moens

Publication Activity (10 Years)

Years Active: 2004-2024
Publications (10 Years): 16

Top Topics

Gate Dielectrics

Leakage Current

Top Venues

Microelectron. Reliab.

Publications

M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress. IRPS (2024)
Peter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha
On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs. IRPS (2024)
Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements. IRPS (2024)
Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. IRPS (2023)
Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS (2022)
Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS (2020)
Peter Moens, Arno Stockman
A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. IRPS (2019)
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS (2019)
Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS (2019)
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. (2018)
Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS (2018)
Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC (2017)
Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. (2017)
Peter Moens, Abhishek Banerjee, P. Coppens, A. Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack
Technology and design of GaN power devices. ESSDERC (2015)
Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens
Trapping induced parasitic effects in GaN-HEMT for power switching applications. ICICDT (2015)
Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS (2015)
Ana Villamor-Baliarda, Piet Vanmeerbeek, Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Jaume Roig, David Flores, Peter Moens
Influence of charge balance on the robustness of trench-based super junction diodes. Microelectron. Reliab. 52 (9-10) (2012)
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC (2012)
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens
·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52 (9-10) (2012)
Ana Villamor-Baliarda, Piet Vanmeerbeek, Jaume Roig, Peter Moens, David Flores
Electric field unbalance for robust floating ring termination. Microelectron. Reliab. 51 (9-11) (2011)
R. Charavel, Jaume Roig, S. Mouhoubi, P. Gassot, Filip Bauwens, Piet Vanmeerbeek, B. Desoete, Peter Moens, Eddy De Backer
Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices. Microelectron. Reliab. 50 (9-11) (2010)
Jaume Roig, B. Desoete, Filip Bauwens, F. Lovadina, Peter Moens
Thermal resistance assessment in multi-trenched power devices. Microelectron. Reliab. 48 (8-9) (2008)
Marnix Tack, Peter Moens, Renaud Gillon, Johan Janssens, Stefan Van Roeyen, Jan Sevenhans
Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration. ISSCC (2008)
Peter Moens, Geert Van den Bosch
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. Microelectron. Reliab. 48 (8-9) (2008)
P. Coppens, G. Jenicot, H. Casier, F. De Pestel, F. Depuydt, N. Martens, Peter Moens
TLP Characterization of large gate width devices. Microelectron. Reliab. 47 (9-11) (2007)
R. Moonen, Piet Vanmeerbeek, G. Lekens, Ward De Ceuninck, Peter Moens, J. Boutsen
Lifetime modeling of intrinsic gate oxide breakdown at high temperature. Microelectron. Reliab. 47 (9-11) (2007)
K. Reynders, Peter Moens
Integration of an SCR in an active clamp. Microelectron. Reliab. 47 (7) (2007)
Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44 (9-11) (2004)
Herman Casier, Peter Moens, Koen Appeltans
Technology considerations for automotive. ESSCIRC (2004)
Filip Bauwens, Peter Moens
Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations. Microelectron. Reliab. 44 (9-11) (2004)