Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.
Fabrizio MasinMatteo MeneghiniEleonora CanatoAlessandro BarbatoCarlo De SantiArno StockmanAbhishek BanerjeePeter MoensEnrico ZanoniGaudenzio MeneghessoPublished in: IRPS (2020)