Arno Stockman

Publication Activity (10 Years)

Years Active: 2017-2024
Publications (10 Years): 9

Top Topics

Impact Analysis

Physical Constraints

Leakage Current

Structure Extraction

Top Venues

Microelectron. Reliab.

Publications

Davide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. IRPS (2024)
Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature. IRPS (2022)
Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS (2020)
Peter Moens, Arno Stockman
A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability. IRPS (2019)
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS (2019)
Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS (2019)
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. (2018)
Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS (2018)
Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC (2017)