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Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.

Fabrizio MasinCarlo De SantiArno StockmanJ. LettensF. GeenenGaudenzio MeneghessoEnrico ZanoniPeter MoensMatteo Meneghini
Published in: IRPS (2022)
Keyphrases
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  • quantitative analysis