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µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.

Eleonora CanatoFabrizio MasinMatteo BorgaEnrico ZanoniMatteo MeneghiniGaudenzio MeneghessoArno StockmanAbhishek BanerjeePeter Moens
Published in: IRPS (2019)
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