Abhishek Banerjee

Publication Activity (10 Years)

Years Active: 2015-2020
Publications (10 Years): 5

Top Topics

Evaluation Criteria

Power Consumption

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS (2020)
Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS (2019)
Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectron. Reliab. (2017)
Peter Moens, Abhishek Banerjee, P. Coppens, A. Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack
Technology and design of GaN power devices. ESSDERC (2015)
Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. IRPS (2015)