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On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.

Arno StockmanEleonora CanatoAlaleh TajalliMatteo MeneghiniGaudenzio MeneghessoEnrico ZanoniPeter MoensBenoit Bakeroot
Published in: IRPS (2018)
Keyphrases
  • leakage current
  • low voltage
  • electrical properties
  • silicon dioxide
  • power line
  • structuring elements
  • response time
  • design considerations