Michael J. Uren

Publication Activity (10 Years)

Years Active: 1998-2023
Publications (10 Years): 5

Top Topics

Morphological Operations

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. IRPS (2023)
Michael J. Uren, Martin Kuball
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer. BCICTS (2020)
Serge Karboyan, Michael J. Uren, Manikant, James W. Pomeroy, Martin Kuball
in commercial GaN-on-Si HEMTs. Microelectron. Reliab. 81 (2018)
Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC (2017)
Alexander Pooth, Johan Bergsten, Niklas Rorsman, Hassan Hirshy, R. Perks, Paul J. Tasker, Trevor Martin, Richard F. Webster, Dave Cherns, Michael J. Uren, Martin Kuball
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs. Microelectron. Reliab. 68 (2017)
Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectron. Reliab. 55 (12) (2015)
James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. Microelectron. Reliab. 55 (12) (2015)
Huarui Sun, Miguel Montes Bajo, Michael J. Uren, Martin Kuball
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. Microelectron. Reliab. 54 (12) (2014)
Janina Möreke, Chris Hodges, Laura L. E. Mears, Michael J. Uren, Robert M. Richardson, Martin Kuball
Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 54 (5) (2014)
William McGenn, Michael J. Uren, Johannes Benedikt, Paul J. Tasker
Development of an RF IV waveform based stress test procedure for use on GaN HFETs. Microelectron. Reliab. 52 (12) (2012)
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (9-11) (2003)
Mike S. L. Lee, Bernard M. Tenbroek, William Redman-White, James Benson, Michael J. Uren
A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation. IEEE J. Solid State Circuits 36 (1) (2001)
Christopher F. Edwards, William Redman-White, Mark Bracey, Bernard M. Tenbroek, Michael S. L. Lee, Michael J. Uren
A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments. IEEE J. Solid State Circuits 34 (7) (1999)
Bernard M. Tenbroek, Michael S. L. Lee, William Redman-White, R. John T. Bunyan, Michael J. Uren
Impact of self-heating and thermal coupling on analog circuits in SOI CMOS. IEEE J. Solid State Circuits 33 (7) (1998)