Martin Kuball

Publication Activity (10 Years)

Years Active: 2011-2023
Publications (10 Years): 5

Top Topics

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. IRPS (2023)
Michael J. Uren, Martin Kuball
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer. BCICTS (2020)
Martin Kuball, James W. Pomeroy, Filip Gucmann, Bahar Oner
Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ? BCICTS (2019)
Serge Karboyan, Michael J. Uren, Manikant, James W. Pomeroy, Martin Kuball
in commercial GaN-on-Si HEMTs. Microelectron. Reliab. 81 (2018)
Alexander Pooth, Johan Bergsten, Niklas Rorsman, Hassan Hirshy, R. Perks, Paul J. Tasker, Trevor Martin, Richard F. Webster, Dave Cherns, Michael J. Uren, Martin Kuball
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs. Microelectron. Reliab. 68 (2017)
Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectron. Reliab. 55 (12) (2015)
James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. Microelectron. Reliab. 55 (12) (2015)
Huarui Sun, Miguel Montes Bajo, Michael J. Uren, Martin Kuball
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. Microelectron. Reliab. 54 (12) (2014)
Janina Möreke, Chris Hodges, Laura L. E. Mears, Michael J. Uren, Robert M. Richardson, Martin Kuball
Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 54 (5) (2014)
Milan Tapajna, Nicole Killat, Uttiya Chowdhury, Jose L. Jimenez, Martin Kuball
The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. Microelectron. Reliab. 52 (1) (2012)
Mustapha Faqir, T. Batten, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, Hervé Blanck, S. Rochette, Olivier Vendier, Martin Kuball
Improved thermal management for GaN power electronics: Silver diamond composite packages. Microelectron. Reliab. 52 (12) (2012)
Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectron. Reliab. 51 (2) (2011)