Robert S. Howell

Publication Activity (10 Years)

Years Active: 2014-2023
Publications (10 Years): 5

Top Topics

Ultra Wide Band

Electronic Devices

Measurement Noise

Top Venues

Microelectron. Reliab.

Publications

Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. IRPS (2023)
Timothy Vasen, Brian Novak, Marc Scimonelli, Kevin Frey, Mustapha Saad, Abbey Saia, Benjamin Grisafe, Ken A. Nagamatsu, Josephine Chang, Virginia Wheeler, Karl D. Hobart, Andrew D. Koehler, Patrick Shea, Stephen Van Campen, Robert S. Howell, Shamima Afroz
SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process. BCICTS (2022)
Shamima Afroz, Timothy Vasen, Brian Novak, Ken A. Nagamatsu, Patrick Shea, Sam Wanis, Robert S. Howell, Josephine Chang
Frequency Performance Improvements for SLCFET Amplifier Through Device Scaling. BCICTS (2021)
Jerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu
Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICs. BCICTS (2021)
Ken A. Nagamatsu, Shamima Afroz, Shalini Gupta, Sam Wanis, Jeffrey Hartman, Eric J. Stewart, Patrick Shea, Karen Renaldo, Robert S. Howell, Brian Novak, Annaliese Drechsler, Josephine Chang, Dale Dawson, Ron Freitag, Kevin Frey, Monique Farrell, Georges Siddiqi
Second Generation SLCFET Amplifier: Improved FT/FMAX and Noise Performance. BCICTS (2019)
Robert S. Howell, Randall Lewis, H. George Henry, Harold Hearne, Deas Brown, Dale Dawson, Andris Ezis
Methodology for accurate extrapolation of InGaP/GaAs HBT safe operating area (SOA) for variations in emitter area and ballast resistor size. Microelectron. Reliab. 54 (12) (2014)