Karl D. Hobart

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 6

Top Topics

Schottky Barrier

Semiconductor Devices

Development Cycle

Electrical Properties

Top Venues

Publications

Mansura Sadek, Jesse T. Kemmerling, Ajay Kumar Visvkarma, Rian Guan, Yixin Xiong, Jianan Song, James Spencer Lundh, Karl D. Hobart, Travis J. Anderson, Rongming Chu
2.3 kV GaN Super-Heterojunction FET for Cryogenic Power Switching. DRC (2024)
James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer
AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. DRC (2022)
Timothy Vasen, Brian Novak, Marc Scimonelli, Kevin Frey, Mustapha Saad, Abbey Saia, Benjamin Grisafe, Ken A. Nagamatsu, Josephine Chang, Virginia Wheeler, Karl D. Hobart, Andrew D. Koehler, Patrick Shea, Stephen Van Campen, Robert S. Howell, Shamima Afroz
SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process. BCICTS (2022)
Assaad El Helou, Marko J. Tadjer, Karl D. Hobart, Peter E. Raad
Effects of Thermal Boundary Resistance on the Thermal Performance of GaN HEMT on Diamond. IRPS (2020)
Shamima Afroz, Virginia Wheeler, Marko J. Tadjer, James Gallagher, Geoffrey Foster, Karl D. Hobart, Brian Novak, Ken Nagamatsu, Kevin Frey, Patrick Shea, Rob Howell, Josephine Chang, Andrew D. Koehler, Tatyana Feygelson
Diamond Superjunction (SJ) Process Development: Super-Lattice Power Amplifier with Diamond Enhanced Superjunction (SPADES). BCICTS (2019)
Marko J. Tadjer, Travis J. Anderson, James C. Gallagher, Peter E. Raad, Pavel L. Komarov, Andrew D. Koehler, Karl D. Hobart, Fritz J. Kub
Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility Transistors. DRC (2018)