AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices.
James Spencer LundhHannah N. MastenKohei SasakiAlan G. JacobsZhe ChengJoseph SpencerLei ChenJames C. GallagherAndrew D. KoehlerKeita KonishiSamuel GrahamAkito KuramataKarl D. HobartMarko J. TadjerPublished in: DRC (2022)
Keyphrases
- semiconductor devices
- genetic algorithm ga
- field effect transistors
- management system
- schottky barrier
- genetic algorithm
- power consumption
- power grid
- infrared
- steady state
- hybrid genetic algorithm
- information management
- mobile devices
- evolutionary algorithm
- information systems
- data management
- mathematical analysis
- electrical power
- electron beam
- fitness function
- network management
- dynamic programming
- search space
- decision making
- neural network
- mobile applications
- databases
- ant colony optimization
- genetic programming
- computer conferencing
- multi objective