Benoit Lambert

Publication Activity (10 Years)

Years Active: 2001-2022
Publications (10 Years): 6

Top Topics

Schottky Barrier

Radio Frequency

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS (2022)
Z. Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS (2022)
Jean-Guy Tartarin, O. Lazar, D. Saugnon, Benoit Lambert, C. Moreau, C. Bouexière, E. Romain-Latu, K. Rousseau, A. David, J.-L. Roux
Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectron. Reliab. (2017)
O. Lazar, Jean-Guy Tartarin, Benoit Lambert, C. Moreau, J.-L. Roux
Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectron. Reliab. 55 (9-10) (2015)
M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
James W. Pomeroy, Michael J. Uren, Benoit Lambert, Martin Kuball
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. Microelectron. Reliab. 55 (12) (2015)
Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54 (9-10) (2014)
Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54 (9-10) (2014)
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53 (9-11) (2013)
P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann
Qualification of 50 V GaN on SiC technology for RF power amplifiers. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC (2012)
Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52 (9-10) (2012)
Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck
Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. Microelectron. Reliab. 52 (9-10) (2012)
Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50 (9-11) (2010)
Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau
Reliability of high voltage/high power L/S-band Hbt technology. Microelectron. Reliab. 50 (9-11) (2010)
Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48 (8-9) (2008)
Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42 (9-11) (2002)
Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41 (9-10) (2001)