GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse.
Francesca ChiocchettaCarlo De SantiFabiana RampazzoKalparupa MukherjeeJan GrünenpüttDaniel SommerHervé BlanckBenoit LambertA. GerosaGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniPublished in: IRPS (2022)