Jan Grünenpütt

Publication Activity (10 Years)

Years Active: 2013-2022
Publications (10 Years): 4

Top Topics

Radio Frequency

Top Venues

Microelectron. Reliab.

Publications

Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS (2022)
Z. Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS (2022)
Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, M. Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, D. Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. (2018)
Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. Microelectron. Reliab. (2017)
Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54 (9-10) (2014)
Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54 (9-10) (2014)
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53 (9-11) (2013)