Nathalie Malbert

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 4

Top Topics

Statistical Analysis

Electrical Properties

Dct Coefficients

Top Venues

Microelectron. Reliab.

Publications

N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IRPS (2023)
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS (2018)
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. (2017)
H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, J.-C. de Jaeger, Nathalie Malbert
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64 (2016)
M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53 (9-11) (2013)
W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC (2012)
Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52 (9-10) (2012)
Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50 (9-11) (2010)
Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49 (9-11) (2009)
Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48 (8-9) (2008)
Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. Microelectron. Reliab. 47 (9-11) (2007)
A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46 (9-11) (2006)
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45 (9-11) (2005)
Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. Microelectron. Reliab. 44 (9-11) (2004)
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (9-11) (2003)
Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42 (9-11) (2002)
Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41 (9-10) (2001)