Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.

Laurent Brunel Benoit Lambert P. Mezenge J. Bataille D. Floriot Jan Grünenpütt Hervé Blanck D. Carisetti Y. Gourdel Nathalie Malbert Arnaud Curutchet Nathalie Labat

Published in: Microelectron. Reliab. (2013)

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