D. Carisetti

Publication Activity (10 Years)

Years Active: 2002-2013
Publications (10 Years): 0

Top Topics

Electromagnetic Fields

Dct Coefficients

Leakage Current

Top Venues

Microelectron. Reliab.

Publications

S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53 (9-11) (2013)
W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53 (9-11) (2013)
Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50 (9-11) (2010)
Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48 (8-9) (2008)
Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. Microelectron. Reliab. 47 (9-11) (2007)
Felix Beaudoin, D. Carisetti, Romain Desplats, Philippe Perdu, Dean Lewis, J. C. Clement
Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices. Microelectron. Reliab. 42 (9-11) (2002)