Arnaud Curutchet

Publication Activity (10 Years)

Years Active: 2003-2018
Publications (10 Years): 4

Top Topics

Dct Coefficients

Electrical Properties

Leakage Current

Top Venues

Microelectron. Reliab.

Publications

Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS (2018)
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. (2017)
J. Bazzi, H. Kassem, Arnaud Curutchet, Franck Pourchon, N. Derrier, Didier Céli, Thomas Zimmer
A two-step de-embedding method valid up to 110 GHz. ICM (2017)
H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, J.-C. de Jaeger, Nathalie Malbert
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64 (2016)
Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. Microelectron. Reliab. 55 (9-10) (2015)
M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53 (9-11) (2013)
Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC (2012)
Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52 (9-10) (2012)
Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49 (9-11) (2009)
A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46 (9-11) (2006)
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (9-11) (2003)