Christophe Gaquière

Publication Activity (10 Years)

Years Active: 2003-2023
Publications (10 Years): 10

Top Topics

Dynamic Power Management

Top Venues

Microelectron. J.

IEEE Trans. Circuits Syst. I Regul. Pap.

Publications

Driss Aouladhadj, Ettien Lazare Kpre, Virginie Deniau, Aymane Kharchouf, Christophe Gransart, Christophe Gaquière
Drone Detection and Tracking Using RF Identification Signals. Sensors 23 (17) (2023)
William R. Eisenstadt, Mark Roos, Devin Morris, José Luis González-Jiménez, Christopery Mounet, Manuel J. Barragan, Gildas Léger, Florent Cilici, Estelle Lauga-Larroze, Salvador Mir, Sylvain Bourdel, Marc Margalef-Rovira, Issa Alaji, Haitham Ghanem, Guillaume Ducournau, Christophe Gaquière
Special Session on RF/5G Test. ETS (2022)
Issa Alaji, Etienne Okada, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière
Temperature compensated power detector towards power consumption optimization in 5G devices. Microelectron. J. 120 (2022)
Marc Margalef-Rovira, Christophe Gaquière, Antonio Augusto Lisboa de Souza, Loic Vincent, Manuel J. Barragan, Emmanuel Pistono, Florence Podevin, Philippe Ferrari
mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs. NEWCAS (2021)
Marc Margalef-Rovira, Olivier Occello, Abdelhalim A. Saadi, Vanessa Avramovic, Sylvie Lépilliet, Loic Vincent, Manuel J. Barragan, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari
mm-Wave Through-Load Element for On-Wafer Measurement Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 68 (8) (2021)
Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lépilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière
Design of zero bias power detectors towards power consumption optimization in 5G devices. Microelectron. J. 111 (2021)
Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. CoRR (2020)
Mohammad Abdul Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière
Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39 (3) (2020)
Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois
Large-area femtosecond laser milling of silicon employing trench analysis. CoRR (2020)
Mohammad Abdul Alim, A. Tahsin, Ali A. Rezazadeh, Christophe Gaquière
Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition. Microelectron. J. 96 (2020)
Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière, Bertrand Boudart
Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectron. Reliab. 55 (9-10) (2015)
Pietro M. Ferreira, Cora Donche, Kamel Haddadi, Tuami Lasri, Gilles Dambrine, Christophe Gaquière, Thomas Quemerais, Daniel Gloria
1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer. NEWCAS (2014)
Florent Gamand, Ming Dong Li, Christophe Gaquière
A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications. IEEE Trans. Circuits Syst. II Express Briefs (11) (2012)
Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectron. Reliab. 52 (9-10) (2012)
F. Berthet, Y. Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectron. Reliab. 51 (9-11) (2011)
Malek Gassoumi, Jean-Marie Bluet, Christophe Gaquière, Gérard Guillot, Hassen Maaref
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. Microelectron. J. 40 (8) (2009)
Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37 (4) (2006)
Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni
Hot carrier aging degradation phenomena in GaN based MESFETs. Microelectron. Reliab. 44 (9-11) (2004)
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (9-11) (2003)