Nabil Sghaier

Publication Activity (10 Years)

Years Active: 2006-2016
Publications (10 Years): 1

Top Topics

Measurement Data

Remotely Sensed Imagery

Illumination Invariant

Top Venues

IEEE Trans. Geosci. Remote. Sens.

Microelectron. Reliab.

Publications

Michele Meroni, Dominique Fasbender, Riad Balaghi, Mustapha Dali, Myriam Haffani, Ismael Haythem, Josh Hooker, Mouanis Lahlou, Raul Lopez-Lozano, Hamid Mahyou, Moncef Ben Moussa, Nabil Sghaier, Talhaoui Wafa, Olivier Leo
Evaluating NDVI Data Continuity Between SPOT-VEGETATION and PROBA-V Missions for Operational Yield Forecasting in North African Countries. IEEE Trans. Geosci. Remote. Sens. 54 (2) (2016)
N. Abdelwahed, M. Troudi, Nabil Sghaier, Abdelkader Souifi
Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes. Microelectron. Reliab. 55 (8) (2015)
Michele Meroni, Eduardo Marinho, Nabil Sghaier, Michel M. Verstraete, Olivier Leo
Remote Sensing Based Yield Estimation in a Stochastic Framework - Case Study of Durum Wheat in Tunisia. Remote. Sens. 5 (2) (2013)
S. Chatbouri, M. Troudi, Nabil Sghaier, A. Kalboussi, Dominique Drouin, V. Aimez, A. Souifi
Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels. SSD (2013)
A. Boubaker, M. Troudi, Nabil Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi
Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator. Microelectron. J. 40 (3) (2009)
A. Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi
A new SIMPLORER model for single-electron transistors. Microelectron. J. 38 (8-9) (2007)
M. Troudi, Nabil Sghaier, A. Boubaker, A. Souifi, A. Kalboussi
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER. Microelectron. J. 38 (12) (2007)
Nabil Sghaier, Liviu Militaru, M'Hamed Trabelsi, Yacoubi Yacoubi, Souifi Souifi
Analysis of slow traps centres in submicron MOSFETs by random telegraph signal technique. Microelectron. J. 38 (4-5) (2007)
Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37 (4) (2006)
Nabil Sghaier, M'Hamed Trabelsi, Ne. Sghaier, Liviu Militaru, Abdelkader Souifi, Adel Kalboussi, Noureddine Yacoubi
Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. Microelectron. J. 37 (11) (2006)