Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates.
Nabil SghaierM'Hamed TrabelsiNoureddine YacoubiJean-Marie BluetAbdelkader SouifiGérard GuillotChristophe GaquièreJ. C. DeJaegerPublished in: Microelectron. J. (2006)