André Touboul

Publication Activity (10 Years)

Years Active: 2001-2008
Publications (10 Years): 0

Publications

M. L. Bourqui, Laurent Béchou, Olivier Gilard, Yannick Deshayes, Pamela Del Vecchio, L. S. How, F. Rosala, Yves Ousten, André Touboul
Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. Microelectron. Reliab. 48 (8-9) (2008)
Nathalie Labat, André Touboul
Editorial. Microelectron. Reliab. 47 (9-11) (2007)
Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47 (9-11) (2007)
Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis
Application of various optical techniques for ESD defect localization. Microelectron. Reliab. 46 (9-11) (2006)
A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46 (9-11) (2006)
Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectron. Reliab. 45 (9-11) (2005)
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45 (9-11) (2005)
Fabien Essely, Corinne Bestory, Nicolas Guitard, Marise Bafleur, A. Wislez, E. Doche, Philippe Perdu, André Touboul, Dean Lewis
Study of the ESD defects impact on ICs reliability. Microelectron. Reliab. 44 (9-11) (2004)
Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. Microelectron. Reliab. 44 (9-11) (2004)
Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. Microelectron. Reliab. 44 (9-11) (2004)
Nathalie Labat, André Touboul
Editorial. Microelectron. Reliab. 43 (9-11) (2003)
Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectron. Reliab. 43 (9-11) (2003)
J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectron. Reliab. 43 (9-11) (2003)
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43 (9-11) (2003)
Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42 (9-11) (2002)
Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41 (9-10) (2001)
Dean Lewis, Vincent Pouget, Thomas Beauchêne, Hervé Lapuyade, Pascal Fouillat, André Touboul, Felix Beaudoin, Philippe Perdu
Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. Microelectron. Reliab. 41 (9-10) (2001)