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Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.

H. LakhdharNathalie LabatArnaud CurutchetNicolas DefranceMarie LesecqJ.-C. de JaegerNathalie Malbert
Published in: Microelectron. Reliab. (2016)
Keyphrases
  • reliability assessment
  • post processing
  • bp neural network model
  • real time
  • machine learning
  • decision making
  • high speed