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Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.

Benoit LambertNathalie LabatDominique CarisettiSerge KarboyanJean-Guy TartarinJim ThorpeLaurent BrunelArnaud CurutchetNathalie MalbertEddy Latu-RomainMichel Mermoux
Published in: Microelectron. Reliab. (2012)
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