Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
S. KarboyanJean-Guy TartarinM. RzinLaurent BrunelArnaud CurutchetNathalie MalbertNathalie LabatD. CarisettiBenoit LambertM. MermouxE. Romain-LatuF. ThomasC. BouexièreC. MoreauPublished in: Microelectron. Reliab. (2013)
Keyphrases
- low frequency
- leakage current
- low voltage
- electrical properties
- high frequency
- electromagnetic fields
- frequency domain
- wavelet transform
- subband
- discrete wavelet transform
- power line
- frequency band
- silicon dioxide
- wavelet coefficients
- cmos technology
- low and high frequency
- power management
- design considerations
- high resolution
- high frequency components
- fusion rules
- dct coefficients
- wavelet domain
- image compression
- video sequences