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Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.

Kalparupa MukherjeeFrédéric DarracqArnaud CurutchetNathalie MalbertNathalie Labat
Published in: IRPS (2018)
Keyphrases
  • wide range
  • three dimensional
  • parallel processing
  • structuring elements
  • mobile networks
  • cmos technology
  • nano scale