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Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications.

Antonio StoccoStefano DalcanaleFabiana RampazzoMatteo MeneghiniGaudenzio MeneghessoJan GrünenpüttBenoit LambertHervé BlanckEnrico Zanoni
Published in: Microelectron. Reliab. (2014)
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