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High resolution physical analysis of ohmic contact formation at GaN-HEMT devices.

Andreas GraffMichél Simon-NajasekFrank AltmannJán KuzmíkDagmar GregusováS. HascikHelmut JungT. BaurJan GrünenpüttHervé Blanck
Published in: Microelectron. Reliab. (2017)
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