Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier.

Z. Gao Francesca Chiocchetta Carlo De Santi Nicola Modolo Fabiana Rampazzo Matteo Meneghini Gaudenzio Meneghesso Enrico Zanoni Hervé Blanck H. Stieglauer D. Sommer Benoit Lambert Jan Grünenpütt O. Kordina J.-T. Chen J.-C. Jacquet Cedric Lacam S. Piotrowicz

Published in: IRPS (2022)

Keyphrases