Maximilian Dammann

Publication Activity (10 Years)

Years Active: 2002-2021
Publications (10 Years): 4

Top Topics

Metal Oxide Semiconductor

Reliability Assessment

High Temperature

Top Venues

Microelectron. Reliab.

Publications

Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, S. Krause, Andreas Graff, Michél Simon-Najasek
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. IRPS (2021)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. (2018)
Andreas Zibold, Maximilian Dammann, Ralf Schmidt, Helmer Konstanzer, Michael Kunzer
Influence of air pollutants on the lifetime of LEDs and analysis of degradation effects. Microelectron. Reliab. (2017)
Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. (2017)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55 (9-10) (2015)
Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS (2015)
Christoph Gerhard, Maximilian Dammann, Stephan Wieneke, Wolfgang Viöl
Sequential Atmospheric Pressure Plasma-Assisted Laser Ablation of Photovoltaic Cover Glass for Improved Contour Accuracy. Micromachines 5 (3) (2014)
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54 (12) (2014)
P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann
Qualification of 50 V GaN on SiC technology for RF power amplifiers. Microelectron. Reliab. 53 (9-11) (2013)
M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51 (2) (2011)
Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49 (5) (2009)
Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla
Reliability of 70 nm metamorphic HEMTs. Microelectron. Reliab. 44 (6) (2004)
Paolo Cova, Roberto Menozzi, Maximilian Dammann, T. Feltgen, W. Jantz
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths. Microelectron. Reliab. 42 (9-11) (2002)
Maximilian Dammann, F. Benkhelifa, M. Meng, W. Jantz
Reliability of Metamorphic HEMTs for Power Applications. Microelectron. Reliab. 42 (9-11) (2002)