Peter Brückner

Publication Activity (10 Years)

Years Active: 2015-2021
Publications (10 Years): 5

Top Topics

Field Effect Transistors

High Temperature

Reliability Analysis

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, S. Krause, Andreas Graff, Michél Simon-Najasek
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. IRPS (2021)
Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. IRPS (2020)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. (2018)
Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. (2017)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55 (9-10) (2015)