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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.

Maximilian DammannMartina BaeumlerPeter BrücknerTobias KemmerHelmer KonstanzerAndreas GraffMichél Simon-NajasekRüdiger Quay
Published in: Microelectron. Reliab. (2018)
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