Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.
Maximilian DammannMartina BaeumlerPeter BrücknerTobias KemmerHelmer KonstanzerAndreas GraffMichél Simon-NajasekRüdiger QuayPublished in: Microelectron. Reliab. (2018)
Keyphrases