Martina Baeumler

Publication Activity (10 Years)

Years Active: 2014-2021
Publications (10 Years): 4

Top Topics

High Temperature

Metal Oxide Semiconductor

Reliability Analysis

Top Venues

Microelectron. Reliab.

Publications

Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, S. Krause, Andreas Graff, Michél Simon-Najasek
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. IRPS (2021)
Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. IRPS (2020)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. (2018)
Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. (2017)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55 (9-10) (2015)
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54 (12) (2014)