Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Matthias WespelMartina BaeumlerVladimir PolyakovMaximilian DammannRichard ReinerPatrick WaltereitRüdiger QuayMichael MikullaOliver AmbacherPublished in: Microelectron. Reliab. (2014)
Keyphrases
- power losses
- duty cycle
- electrical power
- three dimensional
- power consumption
- mobile devices
- d objects
- surface reconstruction
- silicon dioxide
- physical objects
- power system
- single phase
- reactive power
- scanning devices
- transmission line
- active power
- low voltage
- electric power systems
- high voltage
- structuring elements
- electric field
- power supply
- object surface
- smart phones
- mobile applications