Rüdiger Quay

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 11

Top Topics

High Temperature

Power Consumption

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Bharath Cimbili, Mingquan Bao, Christian Friesicke, Rüdiger Quay
32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul. ISSCC (2024)
Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. DRC (2024)
Sebastian Krause, Rüdiger Quay
X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression. IGARSS (2023)
Stefan Moench, Richard Reiner, Michael Basler, Daniel Grieshaber, Fouad Benkhelifa, Patrick Waltereit, Rüdiger Quay
Three-Phase Motor Inverter and Current Sensing GaN Power IC. Sensors 23 (14) (2023)
Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz. DRC (2023)
Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. BCICTS (2023)
Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Döring, Patrick Waltereit, Rüdiger Quay, Oliver Ambacher
Building Blocks for GaN Power Integration. IEEE Access 9 (2021)
Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress. IRPS (2020)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. (2018)
Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. (2017)
Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture, Rüdiger Quay, Oliver Ambacher
Performance of tri-gate AlGaN/GaN HEMTs. ESSDERC (2016)
Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55 (9-10) (2015)
Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. IRPS (2015)
Saqib Kaleem, Jutta Kuhn, Rüdiger Quay, Matthias Hein
A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC. RWS (2015)
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. Microelectron. Reliab. 54 (12) (2014)
M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. Microelectron. Reliab. 51 (2) (2011)
Patrick Jueschke, Dirk Wiegner, Gerhard Luz, R. Machinal, Andreas Pascht, Rüdiger Quay
Multiband Doherty RF power amplifier. AFRICON (2011)
Stephan Maroldt, Dirk Wiegner, Stanislav Vitanov, Vassil Palankovski, Rüdiger Quay, Oliver Ambacher
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz. IEICE Trans. Electron. (8) (2010)
Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectron. Reliab. 49 (5) (2009)
Robert E. Makon, Rachid Driad, Karl Schneider, Manfred Ludwig, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Günter Weimann
InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s. IEEE J. Solid State Circuits 41 (10) (2006)
Rachid Driad, Robert E. Makon, Karl Schneider, Ulrich Nowotny, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Michael Mikulla, Günter Weimann
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications. IEICE Trans. Electron. (7) (2006)
Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla
Reliability of 70 nm metamorphic HEMTs. Microelectron. Reliab. 44 (6) (2004)
Alexandre Bessemoulin, Rüdiger Quay, Suitbert Ramberger, Hermann Massler, Michael Schlechtweg
A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE. IEEE J. Solid State Circuits 38 (9) (2003)
Vassil Palankovski, Rüdiger Quay, Siegfried Selberherr
Industrial application of heterostructure device simulation. IEEE J. Solid State Circuits 36 (9) (2001)