Login / Signup

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.

Maximilian DammannW. PletschenPatrick WaltereitWolfgang BronnerRüdiger QuayStefan MüllerMichael MikullaOliver AmbacherP. J. van der WelS. MuradT. RödleR. BehtashF. BourgeoisK. RiepeMartin FagerlindEinar Örn Sveinbjörnsson
Published in: Microelectron. Reliab. (2009)
Keyphrases