Degradation of 0.25 μm GaN HEMTs under high temperature stress test.
Maximilian DammannMartina BaeumlerPeter BrücknerWolfgang BronnerStephan MaroldtHelmer KonstanzerMatthias WespelRüdiger QuayMichael MikullaAndreas GraffM. LorenziniM. FagerlindP. J. van der WelT. RödlePublished in: Microelectron. Reliab. (2015)