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Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation.
Huarui Sun
Miguel Montes Bajo
Michael J. Uren
Martin Kuball
Published in:
Microelectron. Reliab. (2014)
Keyphrases
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electric field
space charge
edge detection
wide range
multiscale
low power
edge information
silicon dioxide