Geert Van den Bosch

Publication Activity (10 Years)

Years Active: 2004-2024
Publications (10 Years): 10

Top Topics

Top Venues

Microelectron. Reliab.

Publications

Laurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den Bosch, Jan Van Houdt, Maarten Rosmeulen
Gate Side Injection Operating Mode for 3D NAND Flash Memories. IMW (2024)
D. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den Bosch, Maarten Rosmeulen
Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. IRPS (2024)
Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen
Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS (2024)
S. Rachidi, S. Ramesh, Davide Tierno, G. L. Donadio, A. Pacco, J. W. Maes, Y. Jeong, Antonio Arreghini, Geert Van den Bosch, Maarten Rosmeulen
Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. IMW (2024)
Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW (2023)
Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS (2022)
Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS (2022)
Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS (2021)
Davide Tierno, Kristof Croes, Arjun Ajaykumar, Siva Ramesh, Geert Van den Bosch, Maarten Rosmeulen
Reliability of Mo as Word Line Metal in 3D NAND. IRPS (2021)
Anastasiia Kruv, Antonio Arreghini, Mario Gonzalez, Devin Verreck, Geert Van den Bosch, Ingrid De Wolf, A. Furnémont
Impact of Mechanical Stress on the Electrical Performance of 3D NAND. IRPS (2019)
Lifang Liu, Antonio Arreghini, Geert Van den Bosch, Liyang Pan, Jan Van Houdt
Assessment methodology of the lateral migration component in data retention of 3D SONOS memories. Microelectron. Reliab. 54 (9-10) (2014)
Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. Microelectron. Reliab. 54 (9-10) (2014)
Peter Moens, Geert Van den Bosch
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. Microelectron. Reliab. 48 (8-9) (2008)
Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot
Evidence for source side injection hot carrier effects on lateral DMOS transistors. Microelectron. Reliab. 44 (9-11) (2004)