Nicolo Ronchi

Publication Activity (10 Years)

Years Active: 2009-2023
Publications (10 Years): 6

Top Topics

Electronic Devices

Schottky Barrier

Negative Impact

Top Venues

Microelectron. Reliab.

Publications

Zhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den Bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt
Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering. IMW (2023)
Nicolo Ronchi, Lars-Åke Ragnarsson, U. Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den Bosch, Jan Van Houdt
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW (2022)
Anastasiia Kruv, Sean R. C. McMitchell, Sergiu Clima, Oguzhan O. Okudur, Nicolo Ronchi, Geert Van den Bosch, Mario Gonzalez, Ingrid De Wolf, Jan Van Houdt
Impact of mechanical strain on wakeup of HfO2 ferroelectric memory. IRPS (2021)
K. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt
Understanding the memory window in 1T-FeFET memories: a depolarization field perspective. IMW (2021)
D. Saito, T. Kobayashi, Hiroki Koga, Nicolo Ronchi, K. Banerjee, Y. Shuto, Jun Okuno, K. Konishi, Luca Di Piazza, A. Mallik, Jan Van Houdt, M. Tsukamoto, K. Ohkuri, Taku Umebayashi, Takayuki Ezaki
Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI Applications. VLSI Circuits (2021)
Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, K. Banerjee, Umberto Celano, M. Suzuki, Dimitri Linten, Jan Van Houdt
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS (2019)
Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC (2014)
Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54 (9-10) (2014)
Nicolo Ronchi, Franco Zanon, Antonio Stocco, Augusto Tazzoli, Enrico Zanoni, Gaudenzio Meneghesso
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test. Microelectron. Reliab. 49 (9-11) (2009)