Breakdown investigation in GaN-based MIS-HEMT devices.
Fabio Alessio MarinoDavide BisiMatteo MeneghiniGiovanni VerzellesiEnrico ZanoniMarleen Van HoveShuzhen YouStefaan DecoutereDenis MarconSteve StoffelsNicolo RonchiGaudenzio MeneghessoPublished in: ESSDERC (2014)