Lars-Åke Ragnarsson

Publication Activity (10 Years)

Years Active: 2009-2024
Publications (10 Years): 3

Top Topics

Leakage Current

State Transitions

Top Venues

VLSI Technology and Circuits

Publications

Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR (2024)
Hiroaki Arimura, S. Brus, Jacopo Franco, Y. Oniki, A. Vandooren, T. Conard, B. T. Chan, B. Kannan, M. Samiee, W. Li, P. Deminskyi, E. Shero, J. Bakke, N. Jourdan, G. Alessio Verni, J. W. Maes, M. Givens, Lars-Åke Ragnarsson, Jérôme Mitard, E. Dentoni Litta, N. Horiguchi
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET. VLSI Technology and Circuits (2023)
Nicolo Ronchi, Lars-Åke Ragnarsson, U. Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den Bosch, Jan Van Houdt
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW (2022)
Kenichi Miyaguchi, Bertrand Parvais, Lars-Åke Ragnarsson, Piet Wambacq, Praveen Raghavan, Abdelkarim Mercha, Anda Mocuta, Diederik Verkest, Aaron Thean
Modeling FinFET metal gate stack resistance for 14nm node and beyond. ICICDT (2015)
Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52 (9-10) (2012)
Robert O'Connor, Greg Hughes, Thomas Kauerauf, Lars-Åke Ragnarsson
gate dielectric layers. Microelectron. Reliab. 51 (6) (2011)
Thomas Chiarella, Liesbeth Witters, Abdelkarim Mercha, Christoph Kerner, Rok Dittrich, Michal Rakowski, Claude Ortolland, Lars-Åke Ragnarsson, Bertrand Parvais, A. De Keersgieter, S. Kubicek, A. Redolfi, R. Rooyackers, C. Vrancken, S. Brus, A. Lauwers, Philippe Absil, S. Biesemans, Thomas Y. Hoffmann
Migrating from planar to FinFET for further CMOS scaling: SOI or bulk? ESSCIRC (2009)