Jianfu Zhang

Publication Activity (10 Years)

Years Active: 2010-2023
Publications (10 Years): 10

Top Topics

Statistical Distribution

Top Venues

Microelectron. Reliab.

Publications

Xiang Liu, Pengpeng Ren, Hai-Bao Chen, Zhigang Ji, Junhua Liu, Runsheng Wang, Jianfu Zhang, Ru Huang
Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (4) (2023)
James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang
A Pragmatic Model to Predict Future Device Aging. IEEE Access 11 (2023)
Mehzabeen Mehedi, Kean Hong Tok, Zengliang Ye, Jianfu Zhang, Zhigang Ji, Weidong Zhang, John S. Marsland
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude. IEEE Access 9 (2021)
Zhigang Ji, Jianfu Zhang
Understanding Generated RTN as an Entropy Source for True Random Number Generators. ICICDT (2021)
Chunyang Liu, Pengpeng Ren, Bo Zhou, Jianfu Zhang, Hui Fang, Zhigang Ji
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing. IEEE Access 9 (2021)
Mehzabeen Mehedi, Kean Hong Tok, Jianfu Zhang, Zhigang Ji, Zengliang Ye, Weidong Zhang, John S. Marsland
An Assessment of the Statistical Distribution of Random Telegraph Noise Time Constants. IEEE Access 8 (2020)
Rui Gao, Mehzabeen Mehedi, Haibao Chen, Xinsheng Wang, Jianfu Zhang, Xiaoling Lin, Zhiyuan He, Yiqiang Chen, Dengyun Lei, Yun Huang, Yunfei En, Zhigang Ji, Runsheng Wang
A fast and test-proven methodology of assessing RTN/fluctuation on deeply scaled nano pMOSFETs. IRPS (2020)
Jianfu Zhang, Azrif Manut, Rui Gao, Mehzabeen Mehedi, Zhigang Ji, Weidong Zhang, John S. Marsland
An assessment of RTN-induced threshold voltage jitter. ASICON (2019)
Jianfu Zhang, Z. Ji, Wei Dong Zhang
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction. Microelectron. Reliab. 80 (2018)
Jianfu Zhang, Meng Duan, Zhigang Ji, Weidong Zhang
Hot carrier aging of nano-scale devices: Characterization method, statistical variation, and their impact on use voltage. ASICON (2017)
Jianfu Zhang, Meng Duan, Zhigang Ji, Weidong Zhang
NBTI prediction and its induced time dependent variation. ASICON (2015)
Z. Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Y. Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken
ESD characterization of planar InGaAs devices. IRPS (2015)
Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54 (9-10) (2014)
Baojun Tang, Weidong Zhang, Laurent Breuil, Colin Robinson, Yunqi Wang, Maria Toledano-Luque, Geert Van den Bosch, Jianfu Zhang, Jan Van Houdt
Optimization of inter-gate-dielectrics in hybrid float gate devices to reduce window instability during memory operations. Microelectron. Reliab. 54 (9-10) (2014)
Sharifah Wan Muhamad Hatta, Norhayati Soin, D. Abd Hadi, Jianfu Zhang
NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations. Microelectron. Reliab. 50 (9-11) (2010)