Pengpeng Ren

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 23

Top Topics

Dynamic Random Access Memory

Future Development

Top Venues

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.

IEEE Trans. Circuits Syst. I Regul. Pap.

Sci. China Inf. Sci.

Publications

Dinghao Chen, Wenjie Zhu, Xiaoman Yang, Pengpeng Ren, Zhigang Ji, Hai-Bao Chen
Physics-Informed Learning for EPG-Based TDDB Assessment. ASPDAC (2024)
Longda Zhou, Jie Li, Pengpeng Ren, Sheng Ye, Da Wang, Zheng Qiao, Zhigang Ji
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. IRPS (2024)
Jinfeng Ye, Pengpeng Ren, Yongkang Xue, Hui Fang, Zhigang Ji
Fast Aging-Aware Timing Analysis Framework With Temporal-Spatial Graph Neural Network. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43 (6) (2024)
Da Wang, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. IRPS (2024)
Zixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. IRPS (2024)
Shuying Wang, Yewei Zhang, Yunjoong Kim, Pengpeng Ren, Zhigang Ji
A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect. IRPS (2024)
Yu Xiao, Chenyang Zhang, Da Wang, Yongkang Xue, Pengpeng Ren, Zhigang Ji
A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation. IRPS (2024)
Shiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan, Yongkang Xue, Qi Shan, Hannian Wang, Pengpeng Ren, Zhigang Ji, Ru Huang
Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED. IRPS (2024)
Yongkang Xue, Miaojia Yuan, Yu Li, Da Wang, Maokun Wu, Pengpeng Ren, Lining Zhang, Runsheng Wang, Zhigang Ji, Ru Huang
Investigation of Positive Bias Temperature Instability in advanced FinFET nodes. IRPS (2024)
Pengpeng Ren, Yongkang Xue, Linglin Jing, Lining Zhang, Runsheng Wang, Zhigang Ji
A strong physical unclonable function with machine learning immunity for Internet of Things application. Sci. China Inf. Sci. 67 (1) (2024)
Hai-Bao Chen, Xinjie Zhang, Wenjie Zhu, Jie Chen, Pengpeng Ren, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang
DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 71 (5) (2024)
Yishan Wu, Puyang Cai, Zhiwei Liu, Pengpeng Ren, Zhigang Ji
Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM. IRPS (2023)
Xiang Liu, Pengpeng Ren, Hai-Bao Chen, Zhigang Ji, Junhua Liu, Runsheng Wang, Jianfu Zhang, Ru Huang
Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (4) (2023)
Zuoyuan Dong, Zixuan Sun, Xin Yang, Xiaomei Li, Yongkang Xue, Chen Luo, Puyang Cai, Zirui Wang, Shuying Wang, Yewei Zhang, Chaolun Wang, Pengpeng Ren, Zhigang Ji, Xing Wu, Runsheng Wang, Ru Huang
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence. VLSI Technology and Circuits (2023)
Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. IRPS (2023)
Da Wang, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. IRPS (2022)
Yong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang
New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology. IRPS (2022)
Pengpeng Ren, Xinfa Zhang, Junhua Liu, Runsheng Wang, Zhigang Ji, Ru Huang
Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications. IRPS (2022)
Chunyang Liu, Pengpeng Ren, Bo Zhou, Jianfu Zhang, Hui Fang, Zhigang Ji
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing. IEEE Access 9 (2021)
Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang
New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. IRPS (2018)
Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81 (2018)
Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD (2017)
Pengpeng Ren, Runsheng Wang, Ru Huang
Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life. ICICDT (2016)
Ketul B. Sutaria, Pengpeng Ren, Abinash Mohanty, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao
Duty cycle shift under static/dynamic aging in 28nm HK-MG technology. IRPS (2015)